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Monday, 23 January 2017, 17:38 HKT/SGT

Source: Hua Hong Semiconductor
Hua Hong Semiconductor Achieves a Major Milestone in R&D of the Third-Generation Super Junction Technology

HONG KONG, Jan 23, 2017 - (ACN Newswire) - Hua Hong Semiconductor Limited ("Hua Hong Semiconductor" or the "Company", together with its subsidiaries, the "Group"; stock code: 1347.HK), a global leading pure-play 200mm foundry, today announced that it has achieved an initial success by concluding the Stage I in its R&D of the third-generation Super Junction MOSFET ("SJNFET") process platform, which will be introduced to the market gradually in the first half of 2017.

As a global leading pure-play 200mm foundry with more than 10-year's proven track record in stable volume production of power discrete, Hua Hong Semiconductor solved the world-class difficulty of deep trench etching filling process and launched a unique and competitive trench SJNFET process platform, becoming the first foundry that delivers the SJNFET process platform in the industry. Building on its abundant R&D and production experience in the area of Super Junction technology through years of efforts, the company had introduced the first and second generation of the SJNFET process platform, and remains on the innovation track to upgrade the platform echoing the latest trends of the SJNFET industry.

While inheriting the compactness feature of its predecessors, the third-generation SJNFET process platform newly developed by Hua Hong Semiconductor features a new trench gate structure, which, compared with the planar gate structure design of the previous generations, effectively reduces the junction resistance and further downsizes the cell pitch. Another improvement is on-resistance reduction by more than 30% from the second-generation process. For example, the actual on-resistance per unit of area (Rsp) of a third-generation SJNFET device is 1.2ohm.mm2, reaching a world-class standard. All told, the third-generation SJNFET process platform provides customers with a production solution featuring lower on-resistance, lower footprint and switching loss, and faster switching speed.

As a core device in power systems such as switched mode power supplies ("SMPS"), motor drive, LED driver, new energy vehicle ("NEV") and smart grid, power discrete is instrumental to reduce power consumption and increase efficiency. Demand for power discrete will further increase as green energy technologies are bound to be deployed more widely in response to the increasing importance attached to energy efficiency nowadays. With lower power dissipation, Super Junction technology is ideal for high-power fast-charging and LED power supplies, while delivering outstanding performance in conventional PC and cloud server power sources.

"Through working closely with customers in design optimization, system solution and market penetration, Hua Hong Semiconductor has reported an increasing shipment of its unique and competitive SJNFET platform since its volume production, totaling more than 200,000 wafers so far," said Dr. Kong Weiran, Executive Vice President of Hua Hong Semiconductor, "Introduction of the next-generation SJNFET process platform will further consolidate our leadership in the power discrete field. We will waste no time in commercializing the platform to cater to the customers' demand for more competitive high-voltage power chip solutions."

Jan 23, 2017 17:38 HKT/SGT
Topic: Press release summary
Sectors: Electronics
From the Asia Corporate News Network

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