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| Tuesday, 8 November 2011, 15:35 HKT/SGT | |
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Source: A*STAR | |
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| Micron and Singapore's A*STAR Data Storage Institute to Develop Spin Transfer Torque Magnetic Random Access Memory |
SINGAPORE, Nov 8, 2011 - (ACN Newswire) - Micron Technology, Inc., and Singapore's A*STAR Data Storage Institute (DSI) jointly announced today that the two companies have entered into an agreement to collaborate on the development of spin transfer torque magnetic random access memory (STT-MRAM), a promising alternative non-volatile memory technology for next-generation storage.
Current commercial solid state drives (SSDs) use NAND Flash memory, a type of non-volatile memory, to store data. Demand for these types of drives has been increasing rapidly. SSDs, unlike hard disk drives (HDDs), contain no moving parts and are less susceptible to physical shock and vibration than HDDs. SSDs are also capable of retaining their memory without power and are very durable. However, as the memory industry continues to scale NAND Flash memory, it sees issues such as limited endurance and high write power. Therefore, the industry is currently researching alternative non-volatile memory solutions such as STT-MRAM. STT-MRAM also has potential to address technology scaling roadmap challenges of volatile memory such as Dynamic RAM (DRAM) and hence can greatly enhance the performance for many volatile memory applications as well.
As part of the collaboration, Micron and DSI will invest in joint research to develop high-density STT-MRAM devices during the next three years. Researchers from both Micron and DSI will work together to develop high-density STT-MRAM devices.
"Micron is actively working on multiple emerging memory development programs, and we are pleased to collaborate with DSI to explore the potential of STT-MRAM," said Scott DeBoer, Micron Vice President of Research and Development.
"DSI is excited about this collaboration with Micron. It signifies our progressive success in attracting the world's best to develop an R&D ecosystem in Singapore for next generation non-volatile memory," said Dr. Pantelis Alexopoulos, Executive Director of DSI. "I believe this is a good opportunity for DSI, as we combine our technological expertise in STT-MRAM with Micron's expertise in memory product development in an advanced fabrication facility."
About Micron
Micron Technology, Inc., is one of the world's leading providers of advanced semiconductor solutions. Through its worldwide operations, Micron manufactures and markets a full range of DRAM, NAND and NOR flash memory, as well as other innovative memory technologies, packaging solutions and semiconductor systems for use in leading-edge computing, consumer, networking, embedded and mobile products. Micron's common stock is traded on the NASDAQ under the MU symbol. To learn more about Micron Technology, Inc., visit www.micron.com.
About Data Storage Institute
The Data Storage Institute (DSI) is a member of the Agency for Science, Technology and Research (A*STAR). Established in 1992 as the Magnetics Technology Centre (MTC), it was renamed Data Storage Institute in 1996. The research institute's vision is to be a vital node in a global community of knowledge generation and innovation, nurturing research talents and capabilities for world-class R&D in next generation storage technologies. For more information, please visit http://www.dsi.a-star.edu.sg.
Contact:
Daniel Francisco
Micron Technology
+1 208 368 5584
dfrancisco@micron.com
Melissa Koh
DSI Corporate Communications
+65 6874 6852
Kohljm@scei.a-star.edu.sg
Topic: Business Tieup
Source: A*STAR
Sectors: Electronics, Daily Finance, Science & Research
http://www.acnnewswire.com
From the Asia Corporate News Network
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